目 录
1、前言..............................................................................................1
1.2研究内容及思路...................................................................1
1.2数据来源及研究方法............................................................ 2
2、概述............................................................................................... 3
3、硅基负极技术整体专利态势分析.................................................... 4
3.1硅基负极技术国际专列申请态势............................................4
3.2础基负极专利技术生命周期分析.............................................5
3.3 硅基费极技术国际专利中请的技术布局.................................8
3.4 硅基负极技术专利国家/地区分布分.......................................11
3.4.1 受理量国家/地区分布................................................11
3.4.2主要国家/地区专利申请活跃度分析............................11
3.4.3主要国家/地区的技术布局..........................................12
3.5 硅基负极技术重要专利申请人分析........................................14
3.5.1重要专利中请人..........................................................16
3.5.3重要中请人专利中请保护区域分布..............................25
3.5.4重要申请人专利申请活跃度及技术影响力分析............27
3.5.5重要申请人硅基负极各技术分支中请量变化情况.........28
3.6 硅基极重点专利技术追踪分析.................................................. 29
3.6.1 W02004086539- A1..................... ...............................29
3.6.2 US2002164479-A1..................... .................................35
3.6.3 US2003118905-A1........................................................42
3.6.4 WO2004097962-A1.......................................................44
3.6.5 US200622862-A1...........................................................46
3.6.6 W02008126800-A1.........................................................56
3.6.7 US2004058240-A1..........................................................56
3.6.8 W02006030681-A1..........................................................61
3.7 小结................................................................................................65
4、硅基负极技术全球重要专利申请人分析.....................................................67
4.1 索尼公司全球专利申请及其技术演..................................................67
4.2 松下公司全球专利申请及其技..........................................................69
4.3 三星公司全球专利申请及其技术......................................................71
4.4 三洋电机全球专利中请及其技术......................................................73
4.5 日本电气全球专利申请及其技..........................................................75
4.6 日本信越全球专利申请及其技..........................................................75
4.7 韩国LG专利申请及其技术演进.........................................................75
4.8 日本麦克赛尔化学全球专利申请及其技术演进.................................75
4.9 三菱化学全球专利申请及其技术演进...............................................75
4.10 丰田自动织机株式会社全球专利申请及其技术演进........................75
4.5 小结..................................................................................................87
5、硅基负极技术中国区域重点分析..................................................................89
5.1 硅基负极中国区域专利数量年度分布析............................................89
5.2 硅基负极中国区域专利技术类型分布.................................................90
5.3 硅基负极中国区城专利申请来源地分析..............................................91
5.4 硅基负极中国区域专利申请法律状态分析...........................................92
5.5 大学、企业、研究机构等各单元对比分析...........................................93
5.5.1中国区域专利申请人概况分析.................................................93
5.5.2中国区域专利申请人类型及中请数量分析...............................94
5.6 中国区域重要专利申请人分析..............................................................95
5.7 重要专利申请人中国区域专利布局分...................................................97
5.7.1 松下....................................................................................... 97
5.7.2 三洋电机.................................................................................100
5.7.3 信 越.......................................................................................102
5.7.4 索 尼.......................................................................................104
5.7.5 韩国三星.................................................................................106
5.7.6 LG化学....................................................................................109
5.7.7 比亚迪.....................................................................................110
5.7.8 贝特瑞.....................................................................................112
5.7.9 杉 杉....................................................................................... 113
5.7.10 ATL....................................................................................... 114
5.7.11中科院.....................................................................................115
5.8 我国硅基负极技术研究的潜在知识产权风险分析...................................118
5.9 小结...................................................................................................... 118
6、启示..................................................................................................................121